Samsung announced that it has started mass production of the 9th generation 3D V-NAND TLC flash memory with a capacity of 1 Tbit. The new chips offer higher density and energy efficiency compared to 8th generation 3D V-NAND TLC memory chips.

The manufacturer did not specify the number of layers used in the 9th generation 3D V-NAND TLC memory with a capacity of 1 Tbit and the technical process used in their production. However, Samsung noted that the bit density of the 9th generation 3D V-NAND TLC chips has been improved by approximately 50% compared to the previous generation 3D V-NAND TLC memory, thanks to the industry’s compact cell size. The manufacturer also reported that the new memory chips use anti-interference technology, the service life of the cells has increased, and the elimination of imaginary holes in the current-conducting channels makes it possible to significantly reduce the planar area of ​​​​memory cells. .

The 9th generation 3D V-NAND TLC flash memory is equipped with the next generation Toggle 5.1 interface, which increases the data input/output speed by 33% to 3.2 Gbps per pin. In addition, the company reduced energy consumption by 10% compared to the previous generation. Samsung plans to start production of ninth generation 3D V-NAND with QLC cells and 1 Tbit capacity in the second half of the year.