Samsung is gaining an edge over TSMC and has announced mass production of 3 nm GAA chips that provide a number of benefits for various programs and products. According to the Korean manufacturer, GAA technology goes beyond FinFET and plans to expand SoC production for smartphones. Samsung Electronics’ President and Head of Foundry, Dr. Xiong Choi is proud to announce the new architecture with the following description.

“Samsung is growing rapidly as we continue to demonstrate our leadership in the use of next-generation technologies in manufacturing such as the industry’s first High-K Metal Gate, FinFET and EUV. With MBCFET™, we strive to maintain this leadership with the world’s first 3 nm process. We will continue to establish processes to help accelerate attainment of maturity.”

Samsung used another method for mass production of 3 nm GAA chips, which involves the use of proprietary technology and nanolines with larger channels. This approach provides higher performance and improved energy efficiency than GAA technologies that use narrower wires with narrower channels. GAA allows Samsung to take advantage of PPA (power, performance and space) by optimizing design flexibility.

Comparing this to a 5nm process, Samsung claims that its 3nm GAA technology can reduce power consumption by up to 45 percent, increase productivity by 23 percent, and reduce space by 16 percent. Interestingly, Samsung does not mention the differences in improvements compared to the 4 nm process technology, although Samsung says in its press release that work on the 3 nm manufacturing process GAA second generation is ongoing.

This second generation process will reduce energy consumption by up to 50 percent, increase productivity by 30 percent and reduce space by 35 percent. Samsung did not comment on the percentage of 3-nm GAA, but as we have previously reported, the situation has not improved, on the contrary, it has decreased sharply. Performance apparently ranges from 10 to 20 percent, while Samsung’s 4 nanometer processor is 35 percent.