More efficient production from an energetic point of view comes first and foremost to a battery backup (not only) for end users. industry firm TSMC even if there are some problems they have already started to think about production. samung In fact, it started production according to how much was released by the same company with an official communication yesterday. The Korean giant has now started the fight against another brand. Who will come first?

Samsung started the production of various types of chips by lithographic process at 3 nm. What does this mean and when will the first devices be disconnected?

According to Samsung, the performance of 3 nm chips will increase without a 16% reduction in the field of next-generation chips compared to 5 nm solutions. 23% and energy efficiency 45%. The architecture of the transistor will be used during the creation of secondary microcircuits. Versatile door (GAA), received the trade name Multi-Bridge-Channel FET (MBCFET). Combine higher gate channels to allow electricity to pass below voltage levels relative to FinFET.

Samsung claims its processing node at 3 nm offers one flexible design agrees to regulate the width of the channel according to the customers’ needs. In addition, the development of this is already underway second generation chips in the same process technician with improved energy consumption (50%), performance (30%) and surface (35%).

Samsung has yet to confirm how customers will be available for the first draw of 3nm processors. According to some instability, mass production has stabilized a bit, Qualcomm you can order a large-sized lottery to create mobile platforms Next-Gen Snapdragon. We recall the proposal that Samsung announced last month that it is expected to spend $355 billion over the next five years to develop its own semiconductor business.