Samsung has succeeded in maximizing the potential of its LPDDR5X memory solutions. At the end of last year, the company announced that it has started production of its next-generation LPDDR (low power double data rate) DRAM solution that can operate at 8.5 Gbps. Today, the South Korean giant announced that it has completed testing of 8.5 Gbit/s LPDDR5X with Qualcomm.

That’s why we should start seeing such memory solutions paired with Snapdragon chips as the sampling process starts to accelerate. For those who don’t know, Qualcomm tested and approved the use of LPDDR5X in Samsung’s SoCs earlier this year.

Commenting on the announcement, Daniel Lee, vice president of memory product planning group at Samsung Electronics, said:

Joint validation of 8.5 Gbit/s LPDDR5X DRAM has allowed us to increase the market availability of this high-speed memory interface for more than a year, making it a great success thanks to our long-standing collaboration with Qualcomm Technologies.

In terms of comparing the new memory to previous iterations, Samsung’s 8.5Gbps DRAM is about 13.33% faster than previous 7.5Gbps chips. And compared to LPDDR5 non-X, it’s almost 33% ahead. Meanwhile, the capacity is expected to increase to 64GB, although this will likely be used in data centers rather than consumer phones.