OUR Samsung wants to solve once and for all the problems of its semiconductors, the performance and output of which is much lower than that of TSMS🇧🇷 According to the information received probably South Korean joined the American Silicon advanced technology to solve the problems of your technology in 3nm process technology.
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In recent years, the manufacturer exynos ran into problems with his silicon wafers, which were inferior Snapdragon 888 as well as 1st generation, including causing overheating of the latter. The situation was made even worse by the release of these wafers it made, which have a ratio of usable to unusable silicon much lower than that of its competitor and have become quite expensive to use.
Now Samsung wait Silicon advanced technology be able to help you solve these problems with your semiconductors. The American company specializes in chip qualification evaluation and static electricity (electrostatic discharge) prevention technology, which is one of the main defects that occur with this type of chip.

Credits: Samsung Disclosure
O SamMobile notes that both companies have worked together for a long time on the design and manufacture of chips and that the results of this cooperation were considered satisfactory. From now on, South Korean will be use the technology of an American company in the chip verification processhoping to improve the quality of their product.
The purpose of this partnership is clearly to ensure that the problems present in 4nm and 5nm processes do not recur in the future. new 3nm wafer🇧🇷 It is extremely important for Samsung Foundry that it manages to improve the performance and performance of its product, which is one of the company’s big bets for the future.
currently Samsung already lost important customers such as nvidia as well as Qualcomm to TSMS🇧🇷 But the manufacturer Mr. Snapdragon made it clear that if South Korea’s silicon problems were resolved, it could source wafers from both manufacturers as part of its two-foundry supply strategy.
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Via: SamMobile Source: Naver
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