On May 3, Samsung Electronics officially announced the development of UFS 4.0 (Universal Flash Storage) flash memory designed primarily for high-performance smartphones supporting the fifth generation cellular network. The manufacturer said that the latest memory has a fairly high bandwidth and exceptional speeds for exchanging information. Samsung experts, for example, said that Samsung UFS 4.0 memory provides up to 23.2GB/s of bandwidth per line – twice the memory capacity of UFS 3.1.

Also, the manufacturer said that when creating a new flash memory for flagship smartphones, the company uses the seventh-generation Samsung V-NAND memory (not provided), as well as its controller. Due to this, it was possible to realize significant information exchange speeds – sequential read up to 4200 MB / s and sequential write up to 2800 MB / s. Samsung announced a double increase in read speed and 1.6 times increase in write speed compared to UFS 3.1 – this is an absolutely significant figure, because even the previous generation memory coped with almost any task.

But the increase in speed isn’t the only improvement Samsung engineers are working on. The fact is that the new memory also has great energy efficiency, which will be extremely useful for future flagships. The manufacturer noted that the energy consumption was reduced by 46% compared to the UFS 3.1 – this should significantly affect the battery life of the smartphone. And the size of the memory module reaches 1 TB – this is certainly not a record for today’s market, but the memory of the new format will be enough to satisfy any demand of the audience.

UFS 4.0 memory production should begin in the third quarter of this year when the memory will appear on smartphones – it was not reported.