April 16, 2025
Science

Scientists have developed electrochemical memory that could work even in nuclear reactors

  • December 11, 2024
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Traditional silicon-based memory chips cannot operate at temperatures above 100-150°C. This is because they depend on the flow of electrons, which becomes uncontrollable at high temperatures, leading to

Scientists have developed electrochemical memory that could work even in nuclear reactors

Traditional silicon-based memory chips cannot operate at temperatures above 100-150°C. This is because they depend on the flow of electrons, which becomes uncontrollable at high temperatures, leading to electrical degradation and chip failure. 24 Channels with reference Tom’s Hardware.

To overcome this limitation, the University of Michigan team proposed a radical transition from electrons to ions, specifically oxygen ions, which can withstand much higher temperatures. This approach led to the creation of the electrochemical memory cell, a type of memory that works like a battery.

How does new memory work?

An electrochemical memory cell consists of two active layers separated by a solid electrolyte. The layers consist of tantalum (metal) and tantalum oxide saturated with oxygen. When voltage is applied to platinum electrodes, oxygen ions pass from the tantalum oxide layer to the tantalum layer, changing the properties of the material.

This transition process leads to the formation of a metallic tantalum layer at the bottom and a tantalum oxide layer at the top. These layers remain separate and do not mix. The key to data storage is the ability of the tantalum oxide layer to act as a conductor or insulator for electric current, representing binary states of 0 or 1. The stored value remains constant until the polarity of the electrodes is reversed.

Durability and data storage capabilities

According to the researchers’ calculations, the new memory cell can store information at temperatures above 600°C for at least 24 hours. Additionally, by adjusting the cell’s internal resistance, it can store up to 100 levels of information, far beyond the traditional 0/1 binary system.

This positions the advancement in on-chip computing, where more complex calculations can be performed directly on the memory block, increasing memory capacity and data processing efficiency.

A new form of ReRAM

The development at the University of Michigan has much in common with resistive memory (ReRAM), but stands out for its ability to operate at extreme temperatures. However, the memory cell has a unique feature; It only starts working after being heated to at least 150°C.

While this is a limitation for traditional computing devices, it poses no problem for intended applications such as nuclear reactors or jet engines.

Source: 24 Tv

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